Band gap engineering of ZnO thin films by In2O3 incorporation


Highly transparent and conducting thin films of ZnO-In2O3 were deposited using pulsed laser deposition (PLD) technique. The effect of composition and growth temperature on structural, electrical, and optical properties was studied. The lowest resistivity of 2.11×10-4 Ω cm and high transparency (∼80%) was obtained for the film having 5% In2O3 in ZnO. The band gap of the films depends on doping level and varies from 3.37 to 3.95 eV. © 2008 Elsevier B.V. All rights reserved.

Publication Title

Journal of Crystal Growth