Effect of oxygen partial pressure on optoelectrical properties of tin - Doped CdO thin films
Tin-doped CdO thin films were deposited on quartz by pulsed laser deposition technique. The effect of oxygen partial pressure on structural, optical, and electrical properties was studied. It is observed that the (200) plane is highly preferred for the films grown under high oxygen pressure. Atomic force microscopy shows that the films are very smooth with root mean square roughness of 0.7 nm. The experimental results show that oxygen partial pressure influences the electrical properties. The electrical conductivity and carrier concentration decrease with increase in the oxygen pressure. The highest mobility of 238 cm2V-1V-1) is observed. Low resistivity, high mobility, and high optical transmittance (∼ 91%) make these films suitable for optoelectronic applications.
Journal of Optoelectronics and Advanced Materials
Gupta, R., Ghosh, K., Patei, R., Mishra, S., & Kahol, P. (2008). Effect of oxygen partial pressure on optoelectrical properties of tin - Doped CdO thin films. Journal of Optoelectronics and Advanced Materials, 10 (10), 2611-2615. Retrieved from https://digitalcommons.memphis.edu/facpubs/6592