High mobility Ti-doped In2O3 transparent conductive thin films


Highly conducting and transparent titanium (Ti)-doped indium oxide (In2O3) films were deposited on sapphire substrate by ablating the sintered In2O3 target containing 1-10 wt.% TiO2 with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). The effect of growth temperature from room temperature to 600 °C and oxygen pressure (1.0 × 10- 4-2.5 × 10- 7 bar) has been studied by analyzing structural, optical, and electrical properties of these films. The conductivity, carrier concentration and mobility of the films grown at 600 °C are 10,858 S cm- 1, 4.3 × 1020 cm- 3 and 159 cm2 V- 1 s- 1 respectively. This is the highest mobility ever obtained in doped In2O3 films. © 2007 Elsevier B.V. All rights reserved.

Publication Title

Materials Letters