High mobility, transparent, conducting Gd-doped In2O3 thin films by pulsed laser deposition
Highly transparent and conducting thin films of gadolinium doped indium oxide, which have high electron mobility, were deposited on quartz substrate to study the effect of growth temperature and oxygen pressure on their structural, optical, and electrical properties. X-ray diffraction study reveals that these films are randomly oriented on the quartz surface. The average particle size of the films grown at 600 °C was calculated to be ∼ 23 nm. The optical transparency of the films increases with an increase in the growth temperature. The film transparency is also found to increase with increased oxygen pressure during deposition. The electrical properties of these films strongly depend on both the growth temperature and the oxygen pressure. Analysis of the electrical data shows that the mobility of the films increases with increase in the growth temperature. © 2007 Elsevier B.V. All rights reserved.
Thin Solid Films
Gupta, R., Ghosh, K., Mishra, S., & Kahol, P. (2008). High mobility, transparent, conducting Gd-doped In2O3 thin films by pulsed laser deposition. Thin Solid Films, 516 (10), 3204-3209. https://doi.org/10.1016/j.tsf.2007.09.012