Preparation and characterization of highly conducting and transparent Al doped CdO thin films by pulsed laser deposition
Abstract
Highly conducting and transparent aluminum doped CdO thin films were deposited using pulsed laser deposition technique. The effect of growth temperature on structural, electrical, and optical properties was studied. It is observed that the film orientation changes from preferred (1 1 1) plane to (2 0 0) plane with increase in growth temperature. The electrical resistivity of the films was found to increase with increase in growth temperature. The low resistivity of 4.3 × 10-5 Ω cm and high transparency (∼85%) was obtained for the film grown at 150 °C. The band gap of the films varies from 2.74 eV to 2.84 eV. © 2008 Elsevier B.V. All rights reserved.
Publication Title
Current Applied Physics
Recommended Citation
Gupta, R., Ghosh, K., Patel, R., Mishra, S., & Kahol, P. (2009). Preparation and characterization of highly conducting and transparent Al doped CdO thin films by pulsed laser deposition. Current Applied Physics, 9 (3), 673-677. https://doi.org/10.1016/j.cap.2008.06.004
