Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Authors

Rong Jiang, Vanderbilt UniversityFollow
En Xia Zhang, Vanderbilt UniversityFollow
Xiao Shen, University of Memphis
Jin Chen, Vanderbilt University
Kai Ni, Vanderbilt University
Pan Wang, Vanderbilt University
Daniel M. Fleetwood, Vanderbilt UniversityFollow
Ronald D. Schrimpf, Vanderbilt University

Abstract

Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.

Publication Title

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Recommended Citation

Jiang, R., Zhang, E., Shen, X., Chen, J., Ni, K., Wang, P., Fleetwood, D., & Schrimpf, R. (2017). Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, 2016-September, 1-4. https://doi.org/10.1109/RADECS.2016.8093099