Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs


Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.

Publication Title

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS