Electronic Theses and Dissertations
Identifier
6598
Date
2020
Document Type
Thesis
Degree Name
Master of Science
Major
Physics
Concentration
Computational Physics
Committee Chair
Xiao Shen
Committee Member
Thang Ba Hoang
Committee Member
Chenhui Peng
Abstract
The memristor is viewed as a promising material to store digital information and has analog applications that drew researchers’ attention. Researchers explored the possibilities of using memristors to simulate synapses in the human brain. WO3 is one of the materials that can make memristors. Based on the mechanism of memristors, we know the motion of defects in WO3 changes the Schottky barrier and the current; thus, it can make the switch between high resistance state, HRS, and low resistance state, LRS. This paper will explore vacancy diffusivity in WO3. In this research, we concentrate on the cubic and monoclinic structure of WO3. We use the first principle density functional theory or DFT, and hybrid DFT to calculate the formation energy of different charge states of oxygen vacancies in WO3 and plot the graph of Fermi level to find the charge state with the lowest formation energy conditions. We use the nudged elastic band method to get the energy barrier for the vacancies to migrate inside the structure.
Library Comment
Dissertation or thesis originally submitted to the local University of Memphis Electronic Theses & dissertation (ETD) Repository.
Recommended Citation
Chen, Juan, "Calculations of Vacancy Diffusivity in WO3" (2020). Electronic Theses and Dissertations. 2105.
https://digitalcommons.memphis.edu/etd/2105
Comments
Data is provided by the student.