Date of Award
Doctor of Philosophy
Recent advances in materials science have enabled the fabrication of nanostructured semiconductors with one, two or three reduced dimensions. These nanomaterials have a number of new interesting properties and functionalities which do not exist in their macroscopic counterparts. In this research project, we focus on the investigation of the structural, electrical and optical properties of nanostructured silicon telluride (Si2Te3), which is a new class of layered nanomaterial with unprecedented structural variabilities. In a Si2Te3 semiconductor compound, the Te atoms are hexagonally close-packed while Si atoms form Si-Si dimers and fill two-thirds of the allowed sites in-between the packed Te atoms. It has theoretically been predicted that several possible orientations of Si-Si dimer could lead to strikingly different structural, electrical and optical properties of Si2Te3 nanostructures. Various Si2Te3 nanostructures including vertical, titled, and horizontal nanoplates, nanoribbons, and nanowires were fabricated by using the chemical vapor deposition technique. The structures, compositions of various Si2Te3 nanostructures are being investigated by electron microscopy, X-ray photoelectron emission, energy dispersive X-ray spectroscopy. Optical properties of these nanostructures are being investigated by polarized micro-photoluminescence, Raman and reflection measurements at different temperatures and excitation powers. Electrical switching properties of single Si2Te3 nanowires are investigated by using electrochemical method.We expect to develop a comprehensive understanding of properties of Si2Te3 nanostructures and to provide useful information on using these new nanomaterials as building blocks for optoelectronic and chemical sensing.
Dissertation or thesis originally submitted to ProQuest
Chen, Jiyang, "Silicon-basedI nanostructures: Growth and Characterizations of Si2Te3 nanowires and nanoplates" (2021). Electronic Theses and Dissertations. 2494.