Investigation of Ferroelectric Switching Mechanisms in Boron-Substituted Aluminum Nitride

Author

Mackenzie Porterfield

Date

2023

Document Type

Thesis

Degree Name

Master of Science

Department

Physics

Committee Chair

Xiao Shen

Committee Member

Shawn Pollard

Committee Member

Thang Hoang

Abstract

In the pursuit of next-generation memory devices, ferroelectric materials provide a pathway for high-speed operation and non-volatility. The path to marketization for ferroelectric materials favors materials with elements common to the complementary metal-oxide-semiconductor (CMOS) production, which leads to desirability in tuning boron substituted aluminum nitride – a newly demonstrated ferroelectric with CMOS compatible composition. However, for AlBN to realize its potential, understanding and optimizing the polarization reversal process becomes necessary for further device engineering. This study investigates the role of boron in domain formation and propagation. Through first-principles calculations, we determine that introducing boron atoms along the domain boundary initiates domain formation and facilitates growth of polarized domains.

Comments

Data is provided by the student.

Library Comment

Dissertation or thesis originally submitted to ProQuest.

Notes

Open Access

Recommended Citation

Porterfield, Mackenzie, "Investigation of Ferroelectric Switching Mechanisms in Boron-Substituted Aluminum Nitride" (2023). Electronic Theses and Dissertations. 3330.
https://digitalcommons.memphis.edu/etd/3330