Optimal device structure for pipe-shaped BiCS flash memory for ultra high density storage device with excellent performance and reliability

Authors

• Megumi Ishiduki, Toshiba Corporation
• Yoshiaki Fukuzumi, Toshiba Corporation
• Ryota Katsumata, Toshiba Corporation
• Masaru Kito, Toshiba Corporation
• Masaru Kido, Toshiba Corporation
• Hiroyasu Tanaka, Toshiba Corporation
• Yosuke Komori, Toshiba Corporation
• Yuzo Nagata, Toshiba Corporation
• Tomoko Fujiwara, Toshiba Corporation
• Takashi Maeda, Toshiba Corporation
• Yoshimasa Mikajiri, Toshiba Corporation
• Shigeto Oota, Toshiba Corporation
• Makoto Honda, Toshiba Corporation
• Yoshihisa Iwata, Toshiba Corporation
• Ryouhei Kirisawa, Toshiba Corporation
• Hideaki Aochi, Toshiba Corporation
• Akihiro Nitayama, Toshiba Corporation

Abstract

An asymmetric source/drain profile for select gate and metal salicided control gate are successfully realized on Pipe-shaped Bit Cost Scalable (P-BiCS) Flash memory to achieve data storage device with excellent performance and reliability. © 2009 IEEE.

Publication Title

Technical Digest International Electron Devices Meeting Iedm

Recommended Citation

Ishiduki, M., Fukuzumi, Y., Katsumata, R., Kito, M., Kido, M., Tanaka, H., Komori, Y., Nagata, Y., Fujiwara, T., Maeda, T., Mikajiri, Y., Oota, S., Honda, M., Iwata, Y., Kirisawa, R., Aochi, H., & Nitayama, A. (2009). Optimal device structure for pipe-shaped BiCS flash memory for ultra high density storage device with excellent performance and reliability. Technical Digest International Electron Devices Meeting Iedm, 27.3.4. https://doi.org/10.1109/IEDM.2009.5424261