Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices
Abstract
We propose Pipe-shaped Bit Cost Scalable (P-BiCS) flash memory which consists of pipe-shaped NAND strings folded like a U-shape instead of the straight-shape. P-BiCS flash technology achieves a highly reliable memory film of which the program and erase (P/E) operation is managed by Fowler-Nordheim (FN) tunneling, that is originated by the strong curvature effect of its small pipe radius, a low resistance source line by the layered metal wirings and a tightly controlled diffusion profile for the select-gate (SG) transistor due to low thermal budget. The effective 1-bit cell area of 0.00082 um2 and its functionality are successfully demonstrated using the 32 Gbit test chip with the 3-dimensionally 16 stacked layers and the Multi-Level-Cell (MLC) operation by 60nm P-BiCS flash technology.
Publication Title
Digest of Technical Papers Symposium on VLSI Technology
Recommended Citation
Katsumata, R., Kito, M., Fukuzumi, Y., Kido, M., Tanaka, H., Komori, Y., Ishiduki, M., Matsunami, J., Fujiwara, T., Nagata, Y., Zhang, L., Iwata, Y., Kirisawa, R., Aochi, H., & Nitayama, A. (2009). Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices. Digest of Technical Papers Symposium on VLSI Technology, 136-137. Retrieved from https://digitalcommons.memphis.edu/facpub2/663
