A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface
Abstract
We report a high Schottky-barrier between Al and S-passivated p-type Si(100) surface. Capacitance-voltage measurements indicate a barrier height of 1.1 eV, while activation-energy measurements suggest 0.94-0.97 eV. Possible reasons for the discrepancy are proposed. The barrier height of 1.1 eV suggests degenerate inversion on the p-type Si surface, and Fermi statistics is used to describe its electrostatics. Although fabricated like a Schottky diode, this Al/S-passivated p-type Si(100) device works like a p-n junction diode. Temperature-dependent current-voltage measurements reveal that S passivation reduces the reverse saturation current of Al/p-type Si(100) diodes by over six orders of magnitude. © 2007 IEEE.
Publication Title
IEEE Electron Device Letters
Recommended Citation
Song, G., Ali, M., & Tao, M. (2007). A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface. IEEE Electron Device Letters (1), 71-73. https://doi.org/10.1109/LED.2006.887942
