Passivation of a Si(100) surface by S from solution
Abstract
A wet-chemical process has been developed to passivate the Si(100) surface with sulfur (S) in an aqueous solution. The solution contains an etchant for SiO2, ammonium hydroxide [NH4 OH] and a passivant for the surface, ammonium sulfide [(NH4) 2 S]. The compatibility of the etchant with the passivant allows SiO2, native or thermal, to be removed in situ from the surface. A fresh and clean Si(100) surface is exposed right before it is passivated by S. Schottky barrier heights of Al on S-passivated n- and p-type Si(100) show a greater sensitivity to Al work function and Si electron affinity, suggesting good-quality passivation. © 2007 The Electrochemical Society.
Publication Title
Electrochemical and Solid-State Letters
Recommended Citation
Ali, M., & Tao, M. (2007). Passivation of a Si(100) surface by S from solution. Electrochemical and Solid-State Letters (11), 317-320. https://doi.org/10.1149/1.2771079
