Passivation of Si(100) surface by S from a solution and its effect on Schottky barrier height
Abstract
A wet-chemical process has been developed to passivate the S i(100) surface with S in an aqueous solution. The solution contains an etchant for SiO2, ammonium hydroxide [NH 4OH], and a passivant, ammonium sulfide [(NH4) 2S]. The compatibility of the etchant with the passivant allows SiO2, native or thermal, to be removed in-situ. A fresh and clean Si(100) surface is exposed right before the surface is passivated by S. To monitor the passivation quality, Schottky barrier heights of Al and Ni on S-passivated n-type and p-type Si(100) have been measured. Due to the passivation of dangling bonds by S, surface states are reduced to a great extent and Schottky barrier heights of Al and Ni on Si(100) show a greater sensitivity to their respective work functions. Our experimental results also reveal that surface states dominate over surface dipole in controlling the Schottky barrier height in these metal-Si systems. © The Electrochemical Society.
Publication Title
ECS Transactions
Recommended Citation
Ali, M., & Tao, M. (2007). Passivation of Si(100) surface by S from a solution and its effect on Schottky barrier height. ECS Transactions (2), 489-497. https://doi.org/10.1149/1.2731218
