Band gap engineering of ZnO thin films by In2O3 incorporation
Abstract
Highly transparent and conducting thin films of ZnO-In2O3 were deposited using pulsed laser deposition (PLD) technique. The effect of composition and growth temperature on structural, electrical, and optical properties was studied. The lowest resistivity of 2.11×10-4 Ω cm and high transparency (∼80%) was obtained for the film having 5% In2O3 in ZnO. The band gap of the films depends on doping level and varies from 3.37 to 3.95 eV. © 2008 Elsevier B.V. All rights reserved.
Publication Title
Journal of Crystal Growth
Recommended Citation
Gupta, R., Ghosh, K., Patel, R., Mishra, S., & Kahol, P. (2008). Band gap engineering of ZnO thin films by In2O3 incorporation. Journal of Crystal Growth, 310 (12), 3019-3023. https://doi.org/10.1016/j.jcrysgro.2008.03.004
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