Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors

Authors

R. Jiang, Vanderbilt UniversityFollow
X. Shen, Vanderbilt University
J. Chen, Vanderbilt University
G. X. Duan, Vanderbilt University
E. X. Zhang, Vanderbilt UniversityFollow
D. M. Fleetwood, Vanderbilt UniversityFollow
R. D. Schrimpf, Vanderbilt University
S. W. Kaun, University of California, Santa Barbara

Abstract

Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing ON-H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare ON can naturally account for the "super-recovery" in the peak transconductance.

Publication Title

Applied Physics Letters

Recommended Citation

Jiang, R., Shen, X., Chen, J., Duan, G., Zhang, E., Fleetwood, D., Schrimpf, R., & Kaun, S. (2016). Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 109 (2) https://doi.org/10.1063/1.4958706