Electrical stress induced degradation in INAS - ALSB hemts

Authors

S. DasGupta, Vanderbilt UniversityFollow
R. A. Reed, Vanderbilt University
R. D. Schrimpf, Vanderbilt University
D. M. Fleetwood, Vanderbilt UniversityFollow
X. Shen, Vanderbilt University
S. T. Pantelides, Vanderbilt University
J. Bergman, Teledyne Scientific and ImagingFollow
B. Brar, Teledyne Scientific and Imaging

Abstract

InAs - AlSb HEMTs stressed with hot electrons may exhibit shifts in the peak transconductance towards more negative gate voltages. The devices are most degradation prone in operating conditions with high vertical gate field. Annealing trends and theoretical calculations indicate the possible role of an oxygen-induced metastable defect. © 2010 IEEE.

Publication Title

IEEE International Reliability Physics Symposium Proceedings

Recommended Citation

DasGupta, S., Reed, R., Schrimpf, R., Fleetwood, D., Shen, X., Pantelides, S., Bergman, J., & Brar, B. (2010). Electrical stress induced degradation in INAS - ALSB hemts. IEEE International Reliability Physics Symposium Proceedings, 813-817. https://doi.org/10.1109/IRPS.2010.5488729