Electrical stress induced degradation in INAS - ALSB hemts
InAs - AlSb HEMTs stressed with hot electrons may exhibit shifts in the peak transconductance towards more negative gate voltages. The devices are most degradation prone in operating conditions with high vertical gate field. Annealing trends and theoretical calculations indicate the possible role of an oxygen-induced metastable defect. © 2010 IEEE.
IEEE International Reliability Physics Symposium Proceedings
DasGupta, S., Reed, R., Schrimpf, R., Fleetwood, D., Shen, X., Pantelides, S., Bergman, J., & Brar, B. (2010). Electrical stress induced degradation in INAS - ALSB hemts. IEEE International Reliability Physics Symposium Proceedings, 813-817. https://doi.org/10.1109/IRPS.2010.5488729