Electrically controlled reversible and hysteretic magnetic domain evolution in nickel film/Pb(Mg1/3Nb2/3)O3] 0.68-[PbTiO3]0.32 (011) heterostructure

Authors

J. L. Hockel, University of California, Los Angeles
S. D. Pollard, Brookhaven National Laboratory
K. P. Wetzlar, University of California, Los Angeles
T. Wu, University of California, Los Angeles
Y. Zhu, Brookhaven National LaboratoryFollow
G. P. Carman, University of California, Los Angeles

Abstract

We report direct Lorentz microscopy observations of electrically induced magnetic domain motion in a nickel film/Pb(Mg1/3Nb 2/3)O3]0.68-[PbTiO3]0.32 (PMN-PT (011)) heterostructure. The 0.5 mm-thick PMN-PT substrate contains a 10 μm-wide, 60 nm-thick Ni/Pt electron-permeable observation region. Stress from the substrate creates magnetoelastic anisotropy of up to 4 kJ m-3 in the nickel film resulting in reversible magnetization rotation as well as non-reversible domain wall jumps (i.e., Barkhausen jumps). The observed magnetization of the film is directly related to the local strain gradient as computed by the finite element method, providing strong evidence of the effectiveness of the strain-mediated magnetoelectric approach for device applications. © 2013 AIP Publishing LLC.

Publication Title

Applied Physics Letters

Recommended Citation

Hockel, J., Pollard, S., Wetzlar, K., Wu, T., Zhu, Y., & Carman, G. (2013). Electrically controlled reversible and hysteretic magnetic domain evolution in nickel film/Pb(Mg1/3Nb2/3)O3] 0.68-[PbTiO3]0.32 (011) heterostructure. Applied Physics Letters, 102 (24) https://doi.org/10.1063/1.4811249