Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs

Authors

Cher Xuan Zhang, Vanderbilt UniversityFollow
En Xia Zhang, Vanderbilt UniversityFollow
Daniel M. Fleetwood, Vanderbilt UniversityFollow
Ronald D. Schrimpf, Vanderbilt University
Sarit Dhar, Cree, Inc.
Sei Hyung Ryu, Cree, Inc.
Xiao Shen, Vanderbilt University
Sokrates T. Pantelides, Vanderbilt University

Abstract

Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface. © 2012 IEEE.

Publication Title

IEEE Electron Device Letters

Recommended Citation

Zhang, C., Zhang, E., Fleetwood, D., Schrimpf, R., Dhar, S., Ryu, S., Shen, X., & Pantelides, S. (2013). Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs. IEEE Electron Device Letters, 34 (1), 117-119. https://doi.org/10.1109/LED.2012.2228161