Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs
Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface. © 2012 IEEE.
IEEE Electron Device Letters
Zhang, C., Zhang, E., Fleetwood, D., Schrimpf, R., Dhar, S., Ryu, S., Shen, X., & Pantelides, S. (2013). Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs. IEEE Electron Device Letters, 34 (1), 117-119. https://doi.org/10.1109/LED.2012.2228161