Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs


Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface. © 2012 IEEE.

Publication Title

IEEE Electron Device Letters