Oxidation-induced epilayer carbon di-interstitials as a major cause of endemically poor mobilities in 4H-SiC/SiO2 structures
Abstract
The defects at the interface and in the oxide have been considered as the sources of mobility degradation at the SiC/SiO2 interface as in the case of the Si/SiO2 system. By examining available experimental and theoretical results and performing new calculation, we show that thermal oxidation creates immobile carbon di-interstitial defects inside the semiconductor epilayer, which are a major cause of the poor mobility in SiC/SiO2 structures. © (2012) Trans Tech Publications.
Publication Title
Materials Science Forum
Recommended Citation
Shen, X., & Pantelides, S. (2012). Oxidation-induced epilayer carbon di-interstitials as a major cause of endemically poor mobilities in 4H-SiC/SiO2 structures. Materials Science Forum, 717-720, 445-448. https://doi.org/10.4028/www.scientific.net/MSF.717-720.445
