Oxidation-induced epilayer carbon di-interstitials as a major cause of endemically poor mobilities in 4H-SiC/SiO2 structures

Authors

Xiao Shen, Vanderbilt University
Sokrates T. Pantelides, Vanderbilt University

Abstract

The defects at the interface and in the oxide have been considered as the sources of mobility degradation at the SiC/SiO2 interface as in the case of the Si/SiO2 system. By examining available experimental and theoretical results and performing new calculation, we show that thermal oxidation creates immobile carbon di-interstitial defects inside the semiconductor epilayer, which are a major cause of the poor mobility in SiC/SiO2 structures. © (2012) Trans Tech Publications.

Publication Title

Materials Science Forum

Recommended Citation

Shen, X., & Pantelides, S. (2012). Oxidation-induced epilayer carbon di-interstitials as a major cause of endemically poor mobilities in 4H-SiC/SiO2 structures. Materials Science Forum, 717-720, 445-448. https://doi.org/10.4028/www.scientific.net/MSF.717-720.445