Reliability of III-V devices - The defects that cause the trouble
Abstract
Degradation of electronic devices by hot electrons is universally attributed to the generation of defects, but the mechanisms for defect generation and the specific nature of the pertinent defects are not known for most systems. Here we describe three recent case studies in III-V high-electron-mobility transistors that illustrate the power of combining density functional calculations and experimental data to identify the pertinent defects and associated degradation mechanisms. In all cases, benign pre-existing defects are either depassivated (irreversible degradation) or transformed to a metastable state (reversible degradation). © 2011 Elsevier B.V. All rights reserved.
Publication Title
Microelectronic Engineering
Recommended Citation
Pantelides, S., Puzyrev, Y., Shen, X., Roy, T., Dasgupta, S., Tuttle, B., Fleetwood, D., & Schrimpf, R. (2012). Reliability of III-V devices - The defects that cause the trouble. Microelectronic Engineering, 90, 3-8. https://doi.org/10.1016/j.mee.2011.04.019
